Name: Engineering of Point Defects in Solids
Price: 230 USD
Availability: InStock
ISBN: 9780443443053

Engineering of Point Defects in Solids by Sergey V. Bulyarskiy provides a structured account of point defect phenomena in crystalline materials. Published by Elsevier, this volume establishes theoretical foundations for evaluating defect structures, including vacancies, antistructural defects, interstitial atoms, and chemical impurities.

The work explores semiconductor doping mechanisms with focus on silicon and germanium lattices. It addresses key solubility phenomena, such as retrograde solubility, polytrophy, impurity solubility limits, and mutual donor-acceptor impurity interactions, alongside the thermodynamics of complex defects formed with vacancies and divacancies.

The text presents methodologies for calculating and controlling point defect formation, establishing practical links to nano- and microelectronics applications.

Chapter 1: A crystalline solid in a state of equilibrium
Chapter 2: The equilibrium defects concentration calculations by a Gibbs free energy minimization method
Chapter 3: Algorithms for calculating the solubility of impurities in silicon and germanium
Chapter 4: Thermodynamics of vacancies, divacancies, and their complexes in silicon
Chapter 5: Thermodynamics of defect formation in A 3 B 5 compounds
Chapter 6: Optical and photoelectrical properties of the gallium arsenide complexes
Chapter 7: Thermodynamics of compounds with one volatile component and a wide homogeneity region
Chapter 8: Kinetics of formation and decay of complexes in solids
Chapter 9: Kinetics of formation of nanocrystals, clusters, and precipitates of atoms and molecules in solids
Chapter 10: Oxygen precipitates in silicon modeling and experimental studies
Chapter 11: Solubility of impurities in nanoparticles
Chapter 12: Control of oxygen vacancy concentration in oxides by annealing in an oxygen atmosphere