GaN Power Devices for Efficient Power Conversion

Chapter 1: GaN Technology Overview

• • 1.1 Silicon Power MOSFETs: 1976–2010
• • 1.2 The GaN Journey Begins
• • 1.3 GaN and SiC Compared with Silicon
• • 1.4 The Basic GaN Transistor Structure
• • 1.5 Building a GaN HEMT Transistor
• • 1.6 GaN Integrated Circuits
• • 1.7 Summary

Chapter 2: GaN Transistor Electrical Characteristics

• • 2.1 Introduction
• • 2.2 Device Ratings
• • 2.3 Gate Voltage
• • 2.4 On-Resistance (R DS(on))
• • 2.5 Threshold Voltage
• • 2.6 Capacitance and Charge
• • 2.7 Reverse Conduction
• • 2.8 Thermal Characteristics
• • 2.9 Summary

Chapter 3: Driving GaN Transistors

• • 3.1 Introduction
• • 3.2 Gate Drive Voltage
• • 3.3 Gate Drive Resistance
• • 3.4 dv/dt Considerations
• • 3.5 di/dt Considerations
• • 3.6 Bootstrapping and Floating Supplies
• • 3.7 Transient Immunity
• • 3.8 Gate Drivers and Controllers for Enhancement-Mode GaN Transistors
• • 3.9 Cascode, Direct Drive, and Higher-Voltage Configurations
• • 3.10 Using GaN Transistors with Drivers or Controllers Designed for Si MOSFETs
• • 3.11 Driving GaN ICs
• • 3.12 Summary

Chapter 4: Layout Considerations for GaN Transistor Circuits

• • 4.1 Introduction
• • 4.2 Origin of Parasitic Inductance
• • 4.3 Minimizing Common-Source Inductance
• • 4.4 Minimizing Power-Loop Inductance in a Half-Bridge Configuration
• • 4.5 Paralleling GaN Transistors
• • 4.6 Summary

Chapter 5: GaN Reliability

• • 5.1 Introduction
• • 5.2 Getting Started with GaN Reliability
• • 5.3 Determining Wear-Out Mechanisms Using Test-to-Fail Methodology
• • 5.4 Using Test-to-Fail Results to Predict Device Lifetime in a System
• • 5.5 Wear-Out Mechanisms
• • 5.6 Mission-Specific Reliability Predictions
• • 5.7 Summary

Chapter 6: Thermal Management of GaN Devices

• • 6.1 Introduction
• • 6.2 Thermal Equivalent Circuits
• • 6.3 Cooling Methods
• • 6.4 System-Level Thermal Overview: Single FET
• • 6.5 System-Level Thermal Analysis: Multiple FETs
• • 6.6 Experimental Thermal Examples
• • 6.7 Summary

Chapter 7: Hard-Switching Topologies

• • 7.1 Introduction
• • 7.2 Hard-Switching Loss Analysis
• • 7.3 External Factors Impacting Hard-Switching Losses
• • 7.4 Frequency Impact on Magnetics
• • 7.5 Buck Converter Example
• • 7.6 Summary

Chapter 8: Resonant and Soft-Switching Converters

• • 8.1 Introduction
• • 8.2 Resonant and Soft-Switching Techniques
• • 8.3 Key Device Parameters for Resonant and Soft-Switching Applications
• • 8.4 High-Frequency Resonant Bus Converter Example
• • 8.5 Summary

Chapter 9: RF Performance

• • 9.1 Introduction
• • 9.2 Differences Between RF and Switching Transistors
• • 9.3 RF Basics
• • 9.4 RF Transistor Metrics
• • 9.5 Amplifier Design Using Small-Signal s-Parameters
• • 9.6 Amplifier Design Example
• • 9.7 Summary

Chapter 10: DC–DC Power Conversion

• • 10.1 Introduction
• • 10.2 DC–DC Converter Examples
• • 10.3 Summary

Chapter 11: Multilevel Converters

• • 11.1 Introduction
• • 11.2 Benefits of Multilevel Converters
• • 11.3 Experimental Examples
• • 11.4 Summary

Chapter 12: Class D Audio Amplifiers

• • 12.1 Introduction
• • 12.2 GaN Transistor Class D Audio Amplifier Example
• • 12.3 Summary

Chapter 13: High Current Nanosecond Laser Drivers for Lidar

• • 13.1 Introduction to Light Detection and Ranging (Lidar)
• • 13.2 Pulsed Laser Driver Overview
• • 13.3 Basic Design Process
• • 13.4 Hardware Driver Design
• • 13.5 Experimental Results
• • 13.6 Additional Considerations for Laser Transmitter Design
• • 13.7 Summary

Chapter 14: Motor Drives

• • 14.1 Introduction
• • 14.2 Motor Types
• • 14.3 Inverter
• • 14.4 Typical Applications
• • 14.5 Voltage Source Inverters and Motor Control Basics
• • 14.6 Field-Oriented Control Basics
• • 14.7 Current Measurement Techniques
• • 14.8 Power Dissipation in Motor and Inverter
• • 14.9 Silicon Inverter Limitations
• • 14.10 LC Filter Dissipation
• • 14.11 Torque Sixth Harmonic Dissipation
• • 14.12 GaN Advantage
• • 14.13 GaN Switching Behavior
• • 14.14 Dead Time Elimination Effect
• • 14.15 PWM Frequency Increase Effect
• • 14.16 Layout Considerations for Motor Drives
• • 14.17 GaN Devices for Motor Applications
• • 14.18 Application Examples
• • 14.19 Summary

Chapter 15: GaN Transistors and Integrated Circuits for Space Applications

• • 15.1 Introduction
• • 15.2 Failure Mechanisms in Electronic Components Used in Space Applications
• • 15.3 Standards for Radiation Exposure and Tolerance
• • 15.4 Gamma Radiation
• • 15.5 Neutron Radiation (Displacement Damage)
• • 15.6 Single-Event Effects (SEE) Testing
• • 15.7 Performance Comparison Between GaN Transistors and Rad-Hard Si MOSFETs
• • 15.8 GaN Integrated Circuits
• • 15.9 Summary

Chapter 16: Replacing Silicon Power MOSFETs

• • 16.1 Introduction: GaN, Rapid Growth/Great Future
• • 16.2 New Capabilities Enabled by GaN Devices
• • 16.3 GaN Devices Are Easy to Use
• • 16.4 GaN Cost Reduction over Time
• • 16.5 GaN Devices Are Reliable
• • 16.6 Future Direction of GaN Devices
• • 16.7 Summary

Chapter Appendix: Glossary of Terms